Silicon, the leading material in microelectronics during the last decades of the 20th century, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. Many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are illustrated in this text.
Product Identifiers
Publisher
Springer-Verlag New York Inc.
ISBN-13
9781402011948
eBay Product ID (ePID)
95051780
Product Key Features
Subject Area
Material Science, Electrical Engineering
Author
Sergey Gaponenko, Lorenzo Pavesi, Luca Dal Negro
Publication Name
Towards the First Silicon Laser
Format
Paperback
Language
English
Subject
Engineering & Technology, Physics
Publication Year
2003
Type
Textbook
Number of Pages
482 Pages
Dimensions
Item Height
240mm
Item Width
160mm
Volume
93
Item Weight
1530g
Additional Product Features
Series Title
Nato Science Series II: Mathematics, Physics and Chemistry
Country/Region of Manufacture
United States
Editor
Sergey Gaponenko, Luca Dal Negro, Lorenzo Pavesi
Best Selling in Adult Learning & University
Current slide {CURRENT_SLIDE} of {TOTAL_SLIDES}- Best Selling in Adult Learning & University