International Rectifier Industrial Transistors

IRF740 MOSFET. N Channel. Transistor Polarity: N Channel. Continuous Drain Current Id: 10A. Power Dissipation Pd: 125W.

A High Power 130W 33A 100V MOSFET can add some serious power to your next high power driven control circuit. High-Input Impedance makes these devices ideal for being used to control high powered devices from the output pins of CMOS Microcontroller Technology.

HEXFET Power MOSFET. International Rectifier (IR) IRF4905. P Channel -55Volt -74Amp 200W TO-220.

Manufacturer Part #: IRF9530NPBF. Channel Polarity: P. Type: MOSFET. Lead Diameter (mm): 0.7 mm. Lead Spacing (mm): 2.7 mm. Dimensions (L x W x H): 15.2x10.5x4.7 mm. Drain-Source On-Volt: -100 V. Drain Current [Pulsed]: -56 A.

This awesome pair of High Power 130W 33A 100V MOSFET can add some serious power to your next high power driven control circuit. High-Input Impedance makes these devices ideal for being used to control high powered devices from the output pins of CMOS Microcontroller Technology.

We endevour to provide images of the actual item but in some instances may use photos of another item (same model item). You can download the formHERE. Surcharges apply. If an item is listed as "Powered On" we mean that the item turns on and no faults are visible or audible.

Information Technology. Office Equipment. Office Consumables. Included: 5x Transistor as pictured -. BNIB - Unopened / Unused. More info at Consumer Electronics. Model #.

HEXFET Power MOSFET. International Rectifier (IR) IRFZ44N. N Channel 55Volt 49Amp 94W TO-220. Local Pickup is ‘CASH ONLY’ from Salisbury North, Adelaide SA 5108.

HEXFET® Power MOSFET6/26/97ParameterTyp. Power dissipation levels.

Mosfet IRFZ34N To-220-Channel 30amp 55volts x 2pcs. Category: Power MOSFET. Product Type: MOSFET. Maximum Continuous Drain Current: 29A. Typical Turn-On Delay Time: 7ns. Typical Turn-Off Delay Time: 31ns.

Continuous drain current Id of 30A at Vgs 10V and 25°C. Continuous Drain Current Id: 30A. On resistance Rds(on) of 75mohm at Vgs 10V. On Resistance Rds(on): 0.075ohm. Transistor Case Style: TO-247AC. If you are not happy with the charge the sale can be cancelled.

MPN IRL540N Fast switching power mosfet transistor. Project Boxes. Channels N-Channel. Power Dissipation 140W. We're here to help whenever you need us. High quality products at amazing prices. Dedicated Support.

P-Channel Power MOSFET. The contract is revoked in time, if you send the goods within this time period. All of our parts are new and unused. manufacture Ident Code: IRF9Z34NPBF. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

IRF2804PBF International Rectifier Mosfet Transistor N Channel 280 A 40 V 2.3 Mohm 10 V 4 V. Continuous Drain Current Id: 280A. On Resistance Rds(on): 0.0023ohm. Transistor Case Style: TO-220AB. If you are not happy with the charge the sale can be cancelled.

The IRLL2705PBF is a 55V single N-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The power MOSFET is designed for surface-mount using vapour phase, infrared or wave soldering techniques.

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. On Resistance Rds(on): 0.04ohm.

Manufacture Ident Code: IRFZ46NPBF. DS : 55V. The contract is revoked in time, if you send the goods within this time period. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

MPN IRF520N N-Channel Power MOSFET. Project Boxes. Current Id = 9.7A @ Tc = 25°C. Power Dissipation 60W. We're here to help whenever you need us. High quality products at amazing prices. Dedicated Support.

MPN IRFB4110 High speed frequency switching power mosfet transistor. Project Boxes. Channels N-Channel. Power Dissipation 370W. We're here to help whenever you need us. Soldering Technology. Cooling Fan.

MOSFET N 40V 162A TO-220. Junction to Case Thermal Resistance A : 0.75°C/W. You are purchasing part number IRF1404PBF Manufactured by INFINEON. Below is some information given to us by the manufacturer .

Transistor IRF9953TRPBF. Case: SO8. Manufacturer:INTERNATIONAL RECTIFIER. Type: IRF9953TRPBF. Category: MOSFET.

HEXFET Power Mosfet. The contract is revoked in time, if you send the goods within this time period. D : 140A. D : 330W. DS : 100V. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Repetitive avalanche allowed up to Tjmax.

Fast Speed IGBT. The contract is revoked in time, if you send the goods within this time period. manufacture Ident Code: IRG4BC30F. C : 31A. C : 100W. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

HEXFET Power MOSFET. The contract is revoked in time, if you send the goods within this time period. manufacture Ident Code: IRFP3710. DS : 100V. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

Power MOSFET. case: D²PAK. manufacture Ident Code: IRF3205S. DS : 55V. This regulation also comprises those impairments, which are generated from the normal utilization of the goods. The contract is revoked in time, if you send the goods within this time period.

The contract is revoked in time, if you send the goods within this time period. manufacture Ident Code: IRF540N. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

HEXFET Power MOSFET. The contract is revoked in time, if you send the goods within this time period. This regulation also comprises those impairments, which are generated from the normal utilization of the goods.

MPN IRL540N Fast switching power mosfet transistor. Project Boxes. Channels N-Channel. Power Dissipation 140W. We're here to help whenever you need us. High quality products at amazing prices. Dedicated Support.

This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.

MOSFET N 30V 210A TO-220. Junction to Case Thermal Resistance A : 0.65°C/W. You are purchasing part number IRF3703PBF Manufactured by INFINEON. Below is some information given to us by the manufacturer .

MOSFET 150V 171A TO-247AC. You are purchasing part number IRFP4568PBF Manufactured by INFINEON. Below is some information given to us by the manufacturer Continuous Drain Current Id : 171A. On Resistance Rds(on) : 0.0048ohm.

You are purchasing part number IRF9520NPBF Manufactured by INFINEON. Below is some information given to us by the manufacturer MOSFET P TO-220. On Resistance Rds(on) : 480mohm. Transistor Case Style : TO-220AB.

IRFP2907ZPBF International Rectifier Mosfet Transistor N Channel 90 A 75 V 4.5 Mohm 10 V 4 V. On Resistance Rds(on): 0.0045ohm. Transistor Case Style: TO-247AC. If you are not happy with the charge the sale can be cancelled.

Junction temperature range from -55°C to 175°C. On resistance Rds(on) of 20mohm at Vgs of -10V. On Resistance Rds(on): 0.02ohm. Transistor Case Style: TO-220AB. If you are not happy with the charge the sale can be cancelled.

IRF2907ZPBF International Rectifier Mosfet Transistor N Channel 170 A 75 V 4.5 Mohm 10 V 4 V. Continuous Drain Current Id: 170A. On Resistance Rds(on): 0.0045ohm. Transistor Case Style: TO-220. If you are not happy with the charge the sale can be cancelled.

On resistance Rds(on) of 40mohm at Vgs 10V. On Resistance Rds(on): 0.04ohm. Transistor Case Style: TO-247AC. If you are not happy with the charge the sale can be cancelled. During that process you will be issued with an RMA number.

IRLML6302PBF International Rectifier Mosfet Transistor P Channel 600 Ma 20 V 600 Mohm -4.5 V -1.5 V. On Resistance Rds(on): 0.6ohm. Transistor Case Style: SOT-23. If you are not happy with the charge the sale can be cancelled.

The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. 4.8mm Sink to lead creepage distance.

The IRFU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. During that process you will be issued with an RMA number.

IRFP150N International Rectifier Mosfet Transistor N Channel 39 A 100 V 36 Mohm 10 V 2 V. On Resistance Rds(on): 0.036ohm. Transistor Case Style: TO-247AC. If you are not happy with the charge the sale can be cancelled.

IRLU3915PBF International Rectifier Mosfet Transistor N Channel 30 A 55 V 14 Mohm 10 V 3 V. On Resistance Rds(on): 0.014ohm. Transistor Case Style: TO-251AA. If you are not happy with the charge the sale can be cancelled.

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. If you are not happy with the charge the sale can be cancelled. During that process you will be issued with an RMA number.

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Continuous Drain Current Id: 12A.

The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Continuous Drain Current Id: 41A.

The IRFU5305PBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.