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RF Power Amplifiers for Mobile Communications by Patrick Reynaert (English) Pape
US $176.12
ApproximatelyAU $256.64
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Item specifics
- Condition
- ISBN-13
- 9789048172863
- Book Title
- RF Power Amplifiers for Mobile Communications
- ISBN
- 9789048172863
- Subject Area
- Technology & Engineering
- Publication Name
- RF Power Amplifiers for Mobile Communications
- Publisher
- Springer Netherlands
- Item Length
- 9.4 in
- Subject
- Mobile & Wireless Communications, Electrical, Telecommunications, Electronics / General, Microwaves
- Publication Year
- 2010
- Series
- Analog Circuits and Signal Processing Ser.
- Type
- Textbook
- Format
- Trade Paperback
- Language
- English
- Item Weight
- 16 Oz
- Item Width
- 6.3 in
- Number of Pages
- X, 250 Pages
About this product
Product Identifiers
Publisher
Springer Netherlands
ISBN-10
9048172861
ISBN-13
9789048172863
eBay Product ID (ePID)
109200815
Product Key Features
Number of Pages
X, 250 Pages
Language
English
Publication Name
RF Power Amplifiers for Mobile Communications
Publication Year
2010
Subject
Mobile & Wireless Communications, Electrical, Telecommunications, Electronics / General, Microwaves
Type
Textbook
Subject Area
Technology & Engineering
Series
Analog Circuits and Signal Processing Ser.
Format
Trade Paperback
Dimensions
Item Weight
16 Oz
Item Length
9.4 in
Item Width
6.3 in
Additional Product Features
Intended Audience
Scholarly & Professional
Number of Volumes
1 vol.
Illustrated
Yes
Table Of Content
MOBILE COMMUNICATION SYSTEMS AND POWER AMPLIFICATION.- ANALYSIS AND DESIGN OF THE CLASS E POWER AMPLIFIER IN CMOS.- IMPEDANCE TRANSFORMATION AND POWER COMBINATION.- POLAR MODULATION.- A CMOS POWER AMPLIFIER FOR GSM-EDGE.- A CMOS POWER AMPLIFIER FOR BLUETOOTH.- CONCLUSIONS.
Synopsis
RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers. RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail. Finally, two CMOS PAimplementations are thoroughly covered. RF Power Amplifiers for Mobile Communications offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject., RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers. RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail. Finally, two CMOS PA implementations are thoroughly covered. RF Power Amplifiers for Mobile Communications offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject., Preface. 1. INTRODUCTION. 1.1 Wireless Communication. 1.2 CMOS Technology and Scaling. 1.2.1 Moore's Law. 1.2.2 RF-CMOS: Moore meets Marconi. 1.3 The ResearchWork. 1.4 Outline of the Work. 2. MOBILE COMMUNICATION SYSTEMS AND POWER AMPLIFICATION. 2.1 Introduction. 2.2 Mobile Communication Systems. 2.2.1 Modulated Bandpass Signals. 2.2.2 Digital Modulation. 2.2.3 Probability Density Function of the Envelope Signal. 2.3 Some Aspects of Power Amplification. 2.3.1 Output Power. 2.3.2 Peak Output Power and Crest Factor. 2.3.3 Input Power and Power Gain. 2.3.4 Efficiency. 2.3.5 Efficiency and Modulated Signals. 2.3.6 Power Control. 2.3.7 Linearity. 2.3.8 Inductors, Capacitors and Quality Factor. 2.4 Power Amplifier Classification. 2.4.1 Class A. 2.4.2 Reduced Conduction Angle: Class AB, B and C. 2.4.3 Saturated Class A. 2.4.4 Harmonic Tuning for Improved Efficiency: Class F. 2.4.5 Switching Amplifiers. 2.4.6 Class D. 2.4.7 Class E. 2.4.8 Reliability. 2.5 Efficiency and Linearity. 2.5.1 Efficiency Improvement of Linear Amplifiers. 2.5.2 Linearization of Nonlinear Amplifiers. 2.6 Conclusion. 3. ANALYSIS AND DESIGN OF THE CLASS E POWER AMPLIFIER IN CMOS. 3.1 Introduction. 3.2 A Theoretical Study of the Class E Amplifier. 3.2.1 The Class E Requirements. 3.2.2 Existing Methods to Solve the Class E Equations. 3.2.3 A State-Space Model of the Class E Power Amplifier. 3.2.4 Limitations of the State-Space Approach. 3.3 Design of the Class E Amplifier in CMOS. 3.3.1 Design of the Load Resistor. 3.3.2 Design of the DC-feed Inductance. 3.3.3 Design of the nMOS switch. 3.3.4 Technology Scaling. 3.3.5 Device Stacking. 3.3.6 Increasing the Operating Frequency. 3.3.7 Deviation from Class E: Class BE. 3.4 CMOS Layout Aspects. 3.4.1 Integrated Inductors. 3.4.2 Decoupling and Bondwires. 3.5 Conclusion. 4. IMPEDANCE TRANSFORMATION AND POWER COMBINATION. 4.1 Introduction.4.2 L-match Impedance Transformation. 4.2.1 Basic Equations. 4.2.2 Inductor Loss and Efficiency. 4.3 Power Combination. 4.3.1 Basic Equations. 4.3.2 Inductor Loss and Efficiency. 4.3.3 Multi Section Lattice-Type LC Balun. 4.3.4 Power Control. 4.3.5 Multi Section LC Balun with Non-Identical Sections. 4.3.6 Merging the Class E Amplifier and the LC Balun. 4.4 Conclusion. 5. POLAR MODULATION. 5.1 Introduction. 5.2 The Polar Modulation Architecture. 5.2.1 Basic Equations. 5.2.2 Envelope Elimination and Restoration. 5.2.3 Influence of the Driver Stages on the Overall Efficiency. 5.2.4 Implementation of the Amplitude Modulator. 5.3 Distortion in a Polar Modulated Power Amplifier. 5.3.1 Nonlinear Polar Modulated Power Amplifier Models. 5.3.2 Feedforward. 5.3.3 Nonlinear on-resistance. 5.3.4 Nonlinear drain-bulk junction capacitance. 5.3.5 Differential Delay. 5.3.6 Envelope Filtering. 5.3.7 Injection of the Phase Signal. 5.3.8 Linearity Improvement Techniques. 5.4 Power Combination and Polar Modulation. 5.5 Full Digital Linearization. 5.5.1 A single-bit RF D-to-A. 5.5.2 The Lattice-type LC balun as a multi-bit RF D-to-A. 5.6 Conclusion. 6. A CMOS POWER AMPLIFIER FOR GSM-EDGE. 6.1 Introduction. 6.2 The EDGE System. 6.2.1 Enhanced Datarates for GSM Evolution. 6.2.2 Generation of the EDGE Signal. 6.2.3 EDGE Transmitter Linearity Requirements. 6.2.4 EDGE Transmitter Output Power Requirements. 6.3 A Polar Modulated Power Amplifier for EDGE. 6.3.1 Architecture. 6.3.2 Distortion. 6.4 Circuit Implementation. 6.4.1 Design of the RF amplifier. 6.4.2 Design of the Linear Amplitude Modulator. 6.4.3 Layout Aspects. 6.5 Measurements. 6.5.1 Measurement Setup. 6.5.2 Constant Envelope Measurements. 6.5.3 AM-AM and AM-PM Distortion Measurement. 6.5.4 EDGE Measurements. 6.5.5 16-QAM Modulation and Two-Tone Test. 6.6 Architectural Improvements. 6.7 Comparison with Other EDGE Solutions. 6.8 Conclusion. 7. A CMOS POWER AMPLIFIER
LC Classification Number
TK1-9971
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