New solutions are needed for future scaling down of nvolatile memory. Advances in Non-volatile Memory and Storage Techlogy provides an overview of developing techlogies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash techlogies, including developments in 3D NAND flash techlogies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory techlogies. It looks in particular at the fabrication, properties, and performance of nawire phase change memory techlogies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory techlogies. Finally, part three looks to the future of alternative techlogies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as na-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Techlogy is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, natechlogy, solid-state memories, magnetic materials, organic materials, and portable electronic devices.
Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA
Elsevier Science & Technology
Date of Publication
Computing: Textbooks & Study Guides
Woodhead Publishing Series in Electronic and Optical Materials