The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of n-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of n -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of n-crystalline semiconductors and their specific application: -optical properties of n-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in n-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phemena. As a vel item it is worth to mention the study of nlinear optical effects in amorphous semiconducting films. The third order optical n- linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in n-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phemena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference.