Metal-semiconductor contacts are an obvious component of semiconductor device. The current-voltage characteristics of actual metal-semiconductor Schottky-barrier contacts are known to differ from the ideal ones. Considerable scientific interest has been devoted to this situation since the last century. One of the most probable reasons of this deviation is the presence of an intermediate layer between the metal and semiconductor. The presence of interface layer may lead to such effects as the potential drop at the interface layer and barrier lowering, reduction of space charge region, the tunnelling of the electrons through the barrier, and all this, in turn, may be the reason of strong discrepancy in real electrical characteristics of metal-semiconductor contacts. The theme of this thesis is devoted to investigation of the intermediate layer in the metal-semiconductor contact obtained by diffusion welding (DW).
Product Identifiers
Publisher
Lap Lambert Academic Publishing
ISBN-13
9783848422234
eBay Product ID (ePID)
114027951
Product Key Features
Author
Natalja Sleptsuk
Publication Name
Intermediate Layer in the Metal-Silicon Carbide Contact
Format
Paperback
Language
English
Subject
Engineering & Technology
Publication Year
2012
Type
Textbook
Number of Pages
64 Pages
Dimensions
Item Height
229mm
Item Width
152mm
Item Weight
104g
Additional Product Features
Title_Author
Natalja Sleptsuk
Country/Region of Manufacture
Germany
Best Selling in Adult Learning & University
Current slide {CURRENT_SLIDE} of {TOTAL_SLIDES}- Best Selling in Adult Learning & University