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Solid State Electronic Devices by Streetman, Ben G.; Banerjee, Sanjay

by Streetman, Ben G.; Banerjee, Sanjay | HC | Good
US $4.58
ApproximatelyAU $6.87
Condition:
Good
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eBay item number:143894277389
Last updated on 18 Jun, 2024 06:55:33 AESTView all revisionsView all revisions

Item specifics

Condition
Good
A book that has been read but is in good condition. Very minimal damage to the cover including scuff marks, but no holes or tears. The dust jacket for hard covers may not be included. Binding has minimal wear. The majority of pages are undamaged with minimal creasing or tearing, minimal pencil underlining of text, no highlighting of text, no writing in margins. No missing pages. See the seller’s listing for full details and description of any imperfections. See all condition definitionsopens in a new window or tab
Seller notes
“Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, ...
Binding
Hardcover
Weight
2 lbs
Product Group
Book
IsTextBook
Yes
ISBN
0130255386
Subject Area
Technology & Engineering
Publication Name
Solid State Electronic Devices
Publisher
Prentice Hall PTR
Item Length
9.5 in
Subject
Electronics / General
Publication Year
1999
Series
Prentice-Hall Series in Solid State Physical Electronics
Type
Textbook
Format
Hardcover
Language
English
Item Height
1 in
Author
Ben G. Streetman, Sanjay Banerjee
Item Weight
35.8 Oz
Item Width
7.3 in
Number of Pages
558 Pages

About this product

Product Information

This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices. FEATURES/BENEFITS *NEW-Thoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices. *NEW-Expanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1). *NEW-Clearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4). *NEW-Consolidated coverage of p-n junction diodes and its applications (Ch. 5). *NEW-Greatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices). *NEW-Earlier discussion of MOS devices (Ch. 6)-Ahead of bipolar junction transistors-reflects the preponderance of com

Product Identifiers

Publisher
Prentice Hall PTR
ISBN-10
0130255386
ISBN-13
9780130255389
eBay Product ID (ePID)
1210682

Product Key Features

Number of Pages
558 Pages
Language
English
Publication Name
Solid State Electronic Devices
Publication Year
1999
Subject
Electronics / General
Type
Textbook
Subject Area
Technology & Engineering
Author
Ben G. Streetman, Sanjay Banerjee
Series
Prentice-Hall Series in Solid State Physical Electronics
Format
Hardcover

Dimensions

Item Height
1 in
Item Weight
35.8 Oz
Item Length
9.5 in
Item Width
7.3 in

Additional Product Features

Edition Number
5
LCCN
99-016963
Dewey Edition
19
Target Audience
College Audience
Illustrated
Yes
Dewey Decimal
621.3815/2
Lc Classification Number
Tk7871.85.S77 2000
Table of Content
1. Crystal Properties and Growth of Semiconductors. 2. Atoms and Electrons. 3. Energy Bands and Charge Carriers in Semiconductors. 4. Excess Carriers in Semiconductors. 5. Junctions. 6. Field-Effect Transistors. 7. Bipolar Junction Transistors. 8. Optoelectronic Devices. 9. Integrated Circuits. 10. Negative Conductance Microwave Devices. 11. Power Devices. Appendix I. Definitions of Commonly Used Symbols. Appendix II. Physical Constants and Conversion Factors. Appendix III. Properties of Semiconductor Materials. Appendix IV. Derivation of the Density of States in the Conduction Band. Appendix V. Derivation of Fermi-Dirac Statistics. Appendix VI. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Appendix VII. Solid Solubilities of Impurities in Si. Appendix VIII. Diffusivities of Dopants in Si and SiO 2. Appendix IX. Projected Range and Straggle as a Function of Implant Energy in Si, SiO 2 and GaAs. Index.
Copyright Date
2000

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Most relevant reviews

  • Great Book

    I like this book, explaination, and examples, also, the formulas and derivations are clear and takes you step-by-step.