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MOSFETs: Properties, Preparations & Performance by Noah T. Andre (English) Hardc
US $153.14
ApproximatelyAU $230.74
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Located in: Calgary, Alberta, Canada
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eBay item number:386903452871
Item specifics
- Condition
- ISBN-13
- 9781604567625
- Type
- NA
- Publication Name
- NA
- ISBN
- 9781604567625
- Book Title
- Mosfets : Properties, Preparations and Performance
- Publisher
- NOVA Science Publishers, Incorporated
- Item Length
- 7.1 in
- Publication Year
- 2008
- Format
- Hardcover
- Language
- English
- Illustrator
- Yes
- Genre
- Technology & Engineering, Science
- Topic
- Electronics / Semiconductors, Chemistry / General
- Item Weight
- 38.4 Oz
- Item Width
- 10.2 in
- Number of Pages
- 454 Pages
About this product
Product Information
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.
Product Identifiers
Publisher
NOVA Science Publishers, Incorporated
ISBN-10
1604567627
ISBN-13
9781604567625
eBay Product ID (ePID)
66979465
Product Key Features
Book Title
Mosfets : Properties, Preparations and Performance
Number of Pages
454 Pages
Language
English
Publication Year
2008
Topic
Electronics / Semiconductors, Chemistry / General
Illustrator
Yes
Genre
Technology & Engineering, Science
Format
Hardcover
Dimensions
Item Weight
38.4 Oz
Item Length
7.1 in
Item Width
10.2 in
Additional Product Features
Dewey Edition
22
Lccn
2008-023105
Dewey Decimal
621.3815/284
Lc Classification Number
Tk7871.95.M665 2008
Table of Content
Preface; Novel Device Concepts to Overcome MOSFET Limits; Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures; Cryogenic Operation of Power MOSFETs; Redesign and Optimisation of Semiconductor Devices and Circuits; Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models; Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations; Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modelling; Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET ; Bulk FinFETs: Fabrication and Threshold Voltage ; Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques; A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range; Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown; MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications; Index.
Copyright Date
2008
Item description from the seller
Seller assumes all responsibility for this listing.
eBay item number:386903452871
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