CURRENTLY SOLD OUT

Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices by Evgeni Gusev (Paperback, 2006)

The goal of this NATO Advanced Research Workshop (ARW) entitled Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices , which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Subject Area
Electrical Engineering
Author
Evgeni Gusev
Publication Name
Defects in High-K Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices
Format
Paperback
Language
English
Subject
Engineering & Technology, Physics
Publication Year
2006
Type
Textbook
Number of Pages
492 Pages

Best Selling in Adult Learning & University

Current slide {CURRENT_SLIDE} of {TOTAL_SLIDES}- Best Selling in Adult Learning & University

Current slide {CURRENT_SLIDE} of {TOTAL_SLIDES}- Save on Adult Learning & University