The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun .. berg for the discovery of giant magnetoresistance . This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction.
Product Identifiers
Publisher
Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
ISBN-13
9783642260131
eBay Product ID (ePID)
128842793
Product Key Features
Subject Area
Nanotechnology
Author
Marco Fanciulli
Publication Name
Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures
Format
Paperback
Language
English
Subject
Engineering & Technology, Physics
Publication Year
2012
Type
Textbook
Number of Pages
261 Pages
Dimensions
Item Height
235mm
Item Width
155mm
Volume
115
Item Weight
427g
Additional Product Features
Series Title
Topics in Applied Physics
Editor
Marco Fanciulli
Country/Region of Manufacture
Germany
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