Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987 by Gary L. Harris, Cary Y.-W. Yang (Paperback, 2012)
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Product Identifiers
Publisher
Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
ISBN-13
9783642934087
eBay Product ID (ePID)
117546867
Product Key Features
Author
Gary L. Harris, Cary Y.-w. Yang
Publication Name
Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
Format
Paperback
Language
English
Subject
Physics
Publication Year
2012
Type
Textbook
Number of Pages
199 Pages
Dimensions
Item Height
244mm
Item Width
170mm
Volume
34
Item Weight
382g
Additional Product Features
Series Title
Springer Proceedings in Physics
Editor
Cary Y.-w. Yang, Gary L. Harris
Country/Region of Manufacture
Germany
Best Selling in Adult Learning & University
Current slide {CURRENT_SLIDE} of {TOTAL_SLIDES}- Best Selling in Adult Learning & University